WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Poster Papers Chapter 2

A Compact Physical Model for Critical Quantum Mechanical Effects On MOSFET

Authors: L. Wang and J.D. Meindl

Affilation: Georgia Institute of Technology, United States

Pages: 167 - 170

Keywords: MOSFET, quantum mechanical effects, short-channel effects, High-k material

Abstract:
As the MOSFET is scaled down to sub-100nm range, two quantum mechanical effects (QME) of the energy quantization and the electron tunneling though the gate oxide become critical. A new compact physical model for QME is developed in this paper, and incorporated into the short-channel S model. This model gives close agreement with the numerical simulation down to 20 nm effective channel length. For the 20 nm MOSFET with the 0.5 nm EOT, QME lead to the increase of S from 74 mV/decade to105 mV/decade. The scaling limit of bulk MOSFET is calibrated based on two considerations: 1) short-channel effects controllability requiring the EOT reduction with technology generations to keep S

A Compact Physical Model for Critical Quantum Mechanical Effects On MOSFET

ISBN: 0-9767985-3-0
Pages: 412