Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 2: Poster Papers
 

One-Iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current Model

Authors:S.B. Chiah, X. Zhou, K. Chandrasekaran, G.H. See, W. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L-C Hsia
Affilation:Nanyang Technological University, SG
Pages:143 - 146
Keywords:drain current, threshold voltage, unified regional, geometry dependent
Abstract:This paper presents calibration approach for our unified length/width-dependent MOSFET drain current (Ids) model [1] with the length/width-dependent threshold voltage (Vt) model [2] for technology characterization in the entire geometry/bias range for CMOS shallow trench isolation (STI) transistors. The model has been formulated with built-in physical effects to account for short-channel/ narrow-width effects while maintaining Gummel symmetry [3]. Through a one-iteration parameter extraction, the model can predict accurately the experimental data from a 0.11-_m CMOS STI technology wafer.
One-Iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current ModelView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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