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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 2: Poster Papers |
| | One-Iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current Model | | Authors: | S.B. Chiah, X. Zhou, K. Chandrasekaran, G.H. See, W. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L-C Hsia | | Affilation: | Nanyang Technological University, SG | | Pages: | 143 - 146 | | Keywords: | drain current, threshold voltage, unified regional, geometry dependent | | Abstract: | This paper presents calibration approach for our unified length/width-dependent MOSFET drain current (Ids) model [1] with the length/width-dependent threshold voltage (Vt) model [2] for technology characterization in the entire geometry/bias range for CMOS shallow trench isolation (STI) transistors. The model has been formulated with built-in physical effects to account for short-channel/ narrow-width effects while maintaining Gummel symmetry [3]. Through a one-iteration parameter extraction, the model can predict accurately the experimental data from a 0.11-_m CMOS STI technology wafer. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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