Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 2: Poster Papers

All-Region MOS Model of Mismatch due to Random Dopant Placement

Authors:H. Klimach, C. Galup-Montoro and M.C. Schneider
Affilation:Universidade Federal de Santa Catarina, BR
Pages:127 - 130
Keywords:mismatch, matching, compact model, MOSFET
Abstract:Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. A model for MOS transistor mismatch was developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. CMOS test structures were also designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions.The model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters.
All-Region MOS Model of Mismatch due to Random Dopant PlacementView PDF of paper
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