Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 2: Poster Papers

Optimized Threshold-Voltage MOS Transistor Compact Model from the 4-Component Theory

Authors:B.B. Jie and C-T Sah
Affilation:University of Florida, US
Pages:123 - 126
Keywords:space-charge-limited, four-component exact formulation, optimization voltage
Abstract:Based on Sah's 1996 four-component exact formula, a new optimized compact model is derived for long channel MOS transistors. This new model covers subthreshold and linear operation ranges using four independent optimization voltage parameters in the four components which are: parabolic space-charge-limited drift current, bulk-charge depressment of drift current, linear space-charge-limited diffusion current, and bulk-charge enhancement of diffusion current. By comparison of the four current components computed using the 1996 Sah exact formula and the optimized compact model, the four optimization voltages are extracted over operation drain voltage range. The RMS deviation is then obtained for the impurity concentration and oxide thickness matrix. With the extracted optimization voltage parameters, this new model has only one parameter to fit any experimental long channel transistor characteristics, which is the effective substrate dopant-impurity concentration with a known oxide thickness .
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