Compact Modeling of Four-Terminal Junction Field-Effect Transistors

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 1: Invited Papers
	Compact Modeling of Four-Terminal Junction Field-Effect Transistors
Authors:	J. Liou
Affilation:	University of Central Florida, US
Pages:	111 - 116
Keywords:	four-terminal junction field-effect transistors, modeling, JFET compact model
Abstract:	This paper presents a physics -based compact model for a four terminal (independent top and bottom gates) junction field-effect transistor (JFET). The model describes the JFET’s dc and ac characteristics with a high degree of accuracy and continuity. Temperature effect is also accounted for, and the model is applicable for a wide range of operating temperatures.
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ISBN:	0-9767985-3-0
Pages:	412
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