Authors: J. Liou
Affilation: University of Central Florida, United States
Pages: 111 - 116
Keywords: four-terminal junction field-effect transistors, modeling, JFET compact model
This paper presents a physics -based compact model for a four terminal (independent top and bottom gates) junction field-effect transistor (JFET). The model describes the JFET’s dc and ac characteristics with a high degree of accuracy and continuity. Temperature effect is also accounted for, and the model is applicable for a wide range of operating temperatures.