Physics and Modeling of Noise in SiGe HBT Devices and Circuits

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 1: Invited Papers
	Physics and Modeling of Noise in SiGe HBT Devices and Circuits
Authors:	G. Niu
Affilation:	Auburn University, US
Pages:	105 - 110
Keywords:	noise parameters, SiGe HBT, cyclostationary noise, 1=f noise, phase noise
Abstract:	This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö frequency (fT ), low base resistance (rb), and high current gain (¬) using Si processing underlies the low levels of low frequency 1=f noise, RF noise and phase noise of SiGe HBTs. We will show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1=f corner frequency measured under dc biasing.
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ISBN:	0-9767985-3-0
Pages:	412
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