WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Invited Papers Chapter 1

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

Authors: G. Niu

Affilation: Auburn University, United States

Pages: 105 - 110

Keywords: noise parameters, SiGe HBT, cyclostationary noise, 1=f noise, phase noise

Abstract:
This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö frequency (fT ), low base resistance (rb), and high current gain (¬) using Si processing underlies the low levels of low frequency 1=f noise, RF noise and phase noise of SiGe HBTs. We will show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1=f corner frequency measured under dc biasing.

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

ISBN: 0-9767985-3-0
Pages: 412