Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 1: Invited Papers

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

Authors:G. Niu
Affilation:Auburn University, US
Pages:105 - 110
Keywords:noise parameters, SiGe HBT, cyclostationary noise, 1=f noise, phase noise
Abstract:This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö frequency (fT ), low base resistance (rb), and high current gain (¬) using Si processing underlies the low levels of low frequency 1=f noise, RF noise and phase noise of SiGe HBTs. We will show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1=f corner frequency measured under dc biasing.
Physics and Modeling of Noise in SiGe HBT Devices and CircuitsView PDF of paper
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