WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Invited Papers Chapter 1

Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors

Authors: M. Schröter and H. Tran

Affilation: University of Technology Dresden, Germany

Pages: 99 - 104

Keywords: Si/SiGe bipolar transistors, 2D GICCR, 3D GiCCR, compact modeling

Abstract:
This paper presents the derivation of a two- and threedimensional (2D/3D) generalized Integral-Charge Control Relation (GICCR) that is based on an exact physical relation for the transfer current of bipolar transistors. The resulting compact equation includes spatial variations in bandgap, mobility, current density and potential in both vertical and lateral direction within a transistor structure. The derivation provides a clear meaning of (lateral) geometry dependent quantities and parameters, respectively, that have to be analytically described and used, respectively, in a compact transfer current relation.

Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors

ISBN: 0-9767985-3-0
Pages: 412