Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 1: Invited Papers
 

Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET

Authors:A. Ortiz-Conde, F.J. García-Sánchez, S. Malobabic and J. Muci
Affilation:Universidad Simón Bolívar, VE
Pages:63 - 68
Keywords:MOS compact modeling, symmetric DG MOSFET, undoped body MOS, intrinsic channel, drain current model
Abstract:A potential-based drain current model is presented for nanoscale undoped-body symmetric double gate MOSFETs. It is based on a fully coherent physical description and consists of a single analytic equation that includes both drift and diffusion contributions. The derivation is completely rigorous and based on a procedure previously enunciated for long-channel bulk SOI MOSFETs. The resulting expression is a continuous description valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. The validity of the model has been ascertained by extensive comparison to exact numerical simulations. The results attest to the excellent accuracy of this formulation.
Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFETView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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