Authors: B. Iñiguez, H.A. Hamid, D. Jiménez and J. Roig
Affilation: Universitat Rovira i Virgili, Spain
Pages: 52 - 57
Keywords: compact modeling, multiple-gate MOSFETs, SOI MOSFETs, ballistic transport, quantum effects
In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., transistors with small shortchannel effects. We have considered different transport models (drift-diffusion and quasi-ballistic models); each one is valid for a certain range of channel lengths. The models are valid for all the operation regions (linear, saturation, subthreshold) and trace the transition between them without fitting-parameters. The characteristics obtained by this model agree with two- and threedimensional numerical simulations for all ranges of gate and drain voltages.