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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 1: Invited Papers |
| | Compact Model of Multiple-gate SOI MOSFETs | | Authors: | B. Iñiguez, H.A. Hamid, D. Jiménez and J. Roig | | Affilation: | Universitat Rovira i Virgili, ES | | Pages: | 52 - 57 | | Keywords: | compact modeling, multiple-gate MOSFETs, SOI MOSFETs, ballistic transport, quantum effects | | Abstract: | In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., transistors with small shortchannel effects. We have considered different transport models (drift-diffusion and quasi-ballistic models); each one is valid for a certain range of channel lengths. The models are valid for all the operation regions (linear, saturation, subthreshold) and trace the transition between them without fitting-parameters. The characteristics obtained by this model agree with two- and threedimensional numerical simulations for all ranges of gate and drain voltages. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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