Authors: M. Miura-Mattausch, N. Sadachika, M. Murakawa, S. Mimura, T. Higuchi, K. Itoh, R. Inagaki and Y. Iguchi
Affilation: Hiroshima University, Japan
Pages: 69 - 74
Keywords: MOSFET model, surface potential, RF application
This paper discusses a feasibility of an automatic parameter extraction method with the GA (Genetic Algorithm) for surface-potential-based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model), where all device characteristics are described as functions of the surface potential. Conventional parameter extraction with human experts requires iterative procedure due to requirement of elevated accuracy in model parameter values for calculating the surface potentials. The method employs a two-stage extraction procedure operating on different sets of model parameters to speedup the GA extraction. Experimental results demonstrate that extraction of 32 model parameters can be completed within 23 hours with PC (Athlon XP 2500).