Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 1: Invited Papers
 

The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs

Authors:J. Deen, J.C. Ranuárez and C-H. Chen
Affilation:McMaster University, CA
Pages:35 - 39
Keywords:gate tunneling current, high-frequency noise, MOSFET
Abstract:The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of the MOSFET. It is found that the contribution of the GTC is most significant at low frequencies and that the frequencies at which this effect is important can go well into the Giga-Hertz range as the oxide thickness is reduced.
The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETsView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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