Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
 
Chapter 1: Invited Papers
 

Comparison of Surface Potential and Charge-based MOSFET Core Models

Authors:C. Galup-Montoro, M. Schneider, V.C. Pahim and R. Rios
Affilation:Universidade Federal de Santa Catarina, BR
Pages:13 - 18
Keywords:surface potential, inversion charge, compact model, comparison
Abstract:Since the next generation MOSFET model will be based on either surface potential or inversion charge, a comparison between the two approaches is timely. In this paper, we will analyze in some detail the fundamentals of the two approaches. We will compare the expressions for inversion charge and gate capacitance.
Comparison of Surface Potential and Charge-based MOSFET Core ModelsView PDF of paper
ISBN:0-9767985-3-0
Pages:412
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