Invited Papers

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 1: Invited Papers
-	A History of MOS Transistor Compact Modeling
	C-T Sah
	University of Florida, US
-	Advanced Compact Models for MOSFETs
	J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios and C-T Sah
	Joint Paper, UN
-	Comparison of Surface Potential and Charge-based MOSFET Core Models
	C. Galup-Montoro, M. Schneider, V.C. Pahim and R. Rios
	Universidade Federal de Santa Catarina, BR
-	Introduction to PSP MOSFET Model
	G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen
	Pennsylvania State University, US
-	Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches
	X. Zhou, S.B. Chiah, K. Chandrasekaran, G.H. See, W.Z. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L.-C. Hsia
	Nanyang Technological University, SG
-	Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials
	R.W. Dutton, Y. Liu, C.-H. Choi and T.W. Chen
	Stanford University, US
-	The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs
	J. Deen, J.C. Ranuárez and C-H. Chen
	McMaster University, CA
-	Correlated Noise Modeling and Simulation
	C. McAndrew, G. Coram, A. Blaum and O. Pilloud
	Freescale Semiconductor, US
-	Modeling and Characterization of High Frequency Effects in ULSI Interconnects
	N.D. Arora and L. Song
	Cadence Design Systems, US
-	Compact Model of Multiple-gate SOI MOSFETs
	B. Iñiguez, H.A. Hamid, D. Jiménez and J. Roig
	Universitat Rovira i Virgili, ES
-	Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs
	H. Lu and Y. Taur
	University of California at San Diego, US
-	Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET
	A. Ortiz-Conde, F.J. García-Sánchez, S. Malobabic and J. Muci
	Universidad Simón Bolívar, VE
-	RF-MOSFET Model Parameter Extraction with HiSIM
	M. Miura-Mattausch, N. Sadachika, M. Murakawa, S. Mimura, T. Higuchi, K. Itoh, R. Inagaki and Y. Iguchi
	Hiroshima University, JP
-	Challenges in Compact Modeling for RF and Microwave Applications
	A. Niknejad, M. Dunga, B. Heydari, H. Wan, C.H. Lin, S. Emami, C. Doan, X. Xi, J. He, C. Hu
	University of California at Berkeley, US
-	A Study of Figures of Merit for the High Frequency Behavior of MOSFETs in RF IC Applications
	Y. Cheng
	Siliconlinx, US
-	Modeling FET Variation Within a Chip as a Function of Circuit Design and Layout Choices
	J. Watts, N. Lu, C. Bittner, S. Grundon and J. Oppold
	IBM, US
-	Compact Modelling of High-Voltage LDMOS Devices
	A.C.T. Aarts, R. van der Hout, R. van Langevelde, A.J. Scholten, M.B. Willemsen and D.B.M. Klaassen
	Philips Research Laboratories, NE
-	Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors
	M. Schröter and H. Tran
	University of Technology Dresden, DE
-	Physics and Modeling of Noise in SiGe HBT Devices and Circuits
	G. Niu
	Auburn University, US
-	Compact Modeling of Four-Terminal Junction Field-Effect Transistors
	J. Liou
	University of Central Florida, US
-	Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories
	L. Larcher and P. Pavan
	Università di Modena e Reggio Emilia, IT
ISBN:	0-9767985-3-0
Pages:	412
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