WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Invited Papers Chapter 1

A History of MOS Transistor Compact Modeling
C-T Sah
University of Florida, US

Advanced Compact Models for MOSFETs
J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios and C-T Sah
Joint Paper, UN

Comparison of Surface Potential and Charge-based MOSFET Core Models
C. Galup-Montoro, M. Schneider, V.C. Pahim and R. Rios
Universidade Federal de Santa Catarina, BR

Introduction to PSP MOSFET Model
G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen
Pennsylvania State University, US

Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches
X. Zhou, S.B. Chiah, K. Chandrasekaran, G.H. See, W.Z. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L.-C. Hsia
Nanyang Technological University, SG

Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials
R.W. Dutton, Y. Liu, C.-H. Choi and T.W. Chen
Stanford University, US

The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs
J. Deen, J.C. Ranuárez and C-H. Chen
McMaster University, CA

Correlated Noise Modeling and Simulation
C. McAndrew, G. Coram, A. Blaum and O. Pilloud
Freescale Semiconductor, US

Modeling and Characterization of High Frequency Effects in ULSI Interconnects
N.D. Arora and L. Song
Cadence Design Systems, US

Compact Model of Multiple-gate SOI MOSFETs
B. Iñiguez, H.A. Hamid, D. Jiménez and J. Roig
Universitat Rovira i Virgili, ES

Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs
H. Lu and Y. Taur
University of California at San Diego, US

Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET
A. Ortiz-Conde, F.J. García-Sánchez, S. Malobabic and J. Muci
Universidad Simón Bolívar, VE

RF-MOSFET Model Parameter Extraction with HiSIM
M. Miura-Mattausch, N. Sadachika, M. Murakawa, S. Mimura, T. Higuchi, K. Itoh, R. Inagaki and Y. Iguchi
Hiroshima University, JP

Challenges in Compact Modeling for RF and Microwave Applications
A. Niknejad, M. Dunga, B. Heydari, H. Wan, C.H. Lin, S. Emami, C. Doan, X. Xi, J. He, C. Hu
University of California at Berkeley, US

A Study of Figures of Merit for the High Frequency Behavior of MOSFETs in RF IC Applications
Y. Cheng
Siliconlinx, US

Modeling FET Variation Within a Chip as a Function of Circuit Design and Layout Choices
J. Watts, N. Lu, C. Bittner, S. Grundon and J. Oppold
IBM, US

Compact Modelling of High-Voltage LDMOS Devices
A.C.T. Aarts, R. van der Hout, R. van Langevelde, A.J. Scholten, M.B. Willemsen and D.B.M. Klaassen
Philips Research Laboratories, NE

Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors
M. Schröter and H. Tran
University of Technology Dresden, DE

Physics and Modeling of Noise in SiGe HBT Devices and Circuits
G. Niu
Auburn University, US

Compact Modeling of Four-Terminal Junction Field-Effect Transistors
J. Liou
University of Central Florida, US

Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories
L. Larcher and P. Pavan
Università di Modena e Reggio Emilia, IT


ISBN: 0-9767985-3-0
Pages: 412