 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 1: Invited Papers |
| - | A History of MOS Transistor Compact Modeling |
| | C-T Sah |
| | University of Florida, US |
| - | Advanced Compact Models for MOSFETs |
| | J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios and C-T Sah |
| | Joint Paper, UN |
| - | Comparison of Surface Potential and Charge-based MOSFET Core Models |
| | C. Galup-Montoro, M. Schneider, V.C. Pahim and R. Rios |
| | Universidade Federal de Santa Catarina, BR |
| - | Introduction to PSP MOSFET Model |
| | G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen |
| | Pennsylvania State University, US |
| - | Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches |
| | X. Zhou, S.B. Chiah, K. Chandrasekaran, G.H. See, W.Z. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L.-C. Hsia |
| | Nanyang Technological University, SG |
| - | Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials |
| | R.W. Dutton, Y. Liu, C.-H. Choi and T.W. Chen |
| | Stanford University, US |
| - | The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs |
| | J. Deen, J.C. Ranuárez and C-H. Chen |
| | McMaster University, CA |
| - | Correlated Noise Modeling and Simulation |
| | C. McAndrew, G. Coram, A. Blaum and O. Pilloud |
| | Freescale Semiconductor, US |
| - | Modeling and Characterization of High Frequency Effects in ULSI Interconnects |
| | N.D. Arora and L. Song |
| | Cadence Design Systems, US |
| - | Compact Model of Multiple-gate SOI MOSFETs |
| | B. Iñiguez, H.A. Hamid, D. Jiménez and J. Roig |
| | Universitat Rovira i Virgili, ES |
| - | Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs |
| | H. Lu and Y. Taur |
| | University of California at San Diego, US |
| - | Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET |
| | A. Ortiz-Conde, F.J. García-Sánchez, S. Malobabic and J. Muci |
| | Universidad Simón Bolívar, VE |
| - | RF-MOSFET Model Parameter Extraction with HiSIM |
| | M. Miura-Mattausch, N. Sadachika, M. Murakawa, S. Mimura, T. Higuchi, K. Itoh, R. Inagaki and Y. Iguchi |
| | Hiroshima University, JP |
| - | Challenges in Compact Modeling for RF and Microwave Applications |
| | A. Niknejad, M. Dunga, B. Heydari, H. Wan, C.H. Lin, S. Emami, C. Doan, X. Xi, J. He, C. Hu |
| | University of California at Berkeley, US |
| - | A Study of Figures of Merit for the High Frequency Behavior of MOSFETs in RF IC Applications |
| | Y. Cheng |
| | Siliconlinx, US |
| - | Modeling FET Variation Within a Chip as a Function of Circuit Design and Layout Choices |
| | J. Watts, N. Lu, C. Bittner, S. Grundon and J. Oppold |
| | IBM, US |
| - | Compact Modelling of High-Voltage LDMOS Devices |
| | A.C.T. Aarts, R. van der Hout, R. van Langevelde, A.J. Scholten, M.B. Willemsen and D.B.M. Klaassen |
| | Philips Research Laboratories, NE |
| - | Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors |
| | M. Schröter and H. Tran |
| | University of Technology Dresden, DE |
| - | Physics and Modeling of Noise in SiGe HBT Devices and Circuits |
| | G. Niu |
| | Auburn University, US |
| - | Compact Modeling of Four-Terminal Junction Field-Effect Transistors |
| | J. Liou |
| | University of Central Florida, US |
| - | Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories |
| | L. Larcher and P. Pavan |
| | Università di Modena e Reggio Emilia, IT |
| ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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