Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3

Atomic and Mesoscale Modelling of Nanoscale Phenomena Chapter 3

Kinetic Monte Carlo Modeling of Boron Diffusion in Si Crystalline Materials

Authors: J. Seo, C-O Hwang, O. Kwon, K. Kim and T. Won

Affilation: School of Engineering, Inha University, Korea

Pages: 141 - 144

Keywords: atomistic diffusion modeling and simulation, kinetic Monte Carlo, boron diffusion, interstitialcy mechanism, kick-out mechanism

In this paper, we report a lattice-free kinetic Monte Carlo (KMC) result of boron diffusion at low temperatures 450o and 550o with vacancy + interstitialcy mechanism or vacancy + kick-out one with dilute self-interstitials (I) and vacancies (V) created in a B-doped marker layer (410^11B/cm^2 per marker) by Si implantation (50keV, 10^11/cm^2). In this type of KMC model, point defects and dopants are treated at an atomic scale while they are considered to diffuse in accordance with their event rates, which are given as input parameters from ab initio calculations or experimental data. Especially, the formation of clusters and extended defects, which usually control the annealing kinetics after ion implantation, is to be minimized in the range of low doses in an effort to create dilute concentrations of I and V. Therefore, simple vacancy and kick-out or interstitialcy mechanisms without interstitial clusters or extended defects are tested in these conditions and both are in a good agreement with the SIMS data. However, in these dilute concentrations vacancy mechanism plays a dominant role in B diffusion in place of the usual kick-out or interstitialcy mechanism in boron enhanced diffusion.

Kinetic Monte Carlo Modeling of Boron Diffusion in Si Crystalline Materials

ISBN: 0-9728422-9-2
Pages: 561
Hardcopy: $79.95