Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings

	Nanotech 2004 Vol. 3 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 2: Nanoscale Electronics and Quantum Devices
	Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings
Authors:	Y. Li
Affilation:	Natl Nano Device Labs & Natl Chiao Tung Univ, TW
Pages:	53 - 56
Keywords:	spin-orbit splitting, energy states, InAs/GaAs, quantum ring, quantum dot
Abstract:	We investigate the effect of spin-orbit interaction on the electron energy states in nanoscale semiconductor quantum rings. The effective one-band Hamiltonian approximation with the spin-dependent Ben Daniel-Duke boundary conditions is formulated and solved numerically. Due to significant spin-orbit interaction in the nonsimply connected torus topology, experimentally measurable spin splitting can be observed in InAs/GaAs quantum ring. The spin splitting depends on the variations of geometric (dot- and ring-liked) structures. They are dominated by the inner radius, base radius, and height of the quantum ring. Under zero magnetic fields, it is found that quantum ring can produce ~ 2 meV spin splitting of excited electronic states which is substantially larger than that of quantum dot (~ 1meV).
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ISBN:	0-9728422-9-2
Pages:	561
Hardcopy:	$79.95

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