Nano Science and Technology Institute
Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 2: Nanoscale Electronics and Quantum Devices
 

Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires

Authors:B. Lassen, L.C. Lew Yan Voon, R. Melnik and M. Willatzen
Affilation:Worcester Polytechnic Institute, US
Pages:49 - 52
Keywords:semiconductor, nanostructures, V-groove, quantum wires, electronic properties, theory
Abstract:Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.
Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum WiresView PDF of paper
ISBN:0-9728422-9-2
Pages:561
Hardcopy:$79.95
 
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