Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires
Authors:
B. Lassen, L.C. Lew Yan Voon, R. Melnik and M. Willatzen
Affilation:
Worcester Polytechnic Institute, US
Pages:
49 - 52
Keywords:
semiconductor, nanostructures, V-groove, quantum wires, electronic properties, theory
Abstract:
Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.
