Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nanoscale Electronics and Quantum Devices Chapter 2

Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires

Authors: B. Lassen, L.C. Lew Yan Voon, R. Melnik and M. Willatzen

Affilation: Worcester Polytechnic Institute, United States

Pages: 49 - 52

Keywords: semiconductor, nanostructures, V-groove, quantum wires, electronic properties, theory

Abstract:
Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.

Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires

ISBN: 0-9728422-9-2
Pages: 561
Hardcopy: $79.95