Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires

	Nanotech 2004 Vol. 3 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 2: Nanoscale Electronics and Quantum Devices
	Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires
Authors:	B. Lassen, L.C. Lew Yan Voon, R. Melnik and M. Willatzen
Affilation:	Worcester Polytechnic Institute, US
Pages:	49 - 52
Keywords:	semiconductor, nanostructures, V-groove, quantum wires, electronic properties, theory
Abstract:	Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.
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ISBN:	0-9728422-9-2
Pages:	561
Hardcopy:	$79.95

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