Nano Science and Technology Institute
Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 2: Nanoscale Electronics and Quantum Devices

A Sub-40nm Nanostructured La0.7Sr0.3MnO3 Planar Magnetic Memory

Authors:T. Arnal, M. Bibes, Ph. Lecoeur, B. Mercey, W. Prellier and A.M. Haghiri-Gosnet
Affilation:Institut d'Electronique Fondamentale IEF/UMR8622, FR
Pages:41 - 44
Keywords:spintronics, manganite, nanolithography, MRAM
Abstract:A single-step nanolithography planar process, which allows generating the core-element of a spin-polarized magnetic memory in the fully spin-polarized La0.7Sr0.3MnO3 (LSMO) manganite, is reported. Taking benefit of the proximity effects due to backscattered electrons, a conventional electron-beam patterning process at 30 KeV has been optimized to generate sub-50 nm-wide nanokinks in the magnetic microbridge. The best layout for the nanokinks, the electron beam patterning parameters and the results of the ion beam etching (IBE) for transferring these nanopatterns in the magnetic oxide are reported.
A Sub-40nm Nanostructured La0.7Sr0.3MnO3 Planar Magnetic MemoryView PDF of paper
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