Nano Science and Technology Institute
Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 2: Nanoscale Electronics and Quantum Devices

Modeling of Nanoelectronic and Quantum Devices

Authors:D.K. Ferry, R. Akis, M.J. Gilbert and G. Speyer
Affilation:Arizona State University, US
Pages:37 - 40
Keywords:quantum transport, semiconductors, molecules, electron states, MOSFETs
Abstract:The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have active regions that are smaller than relevant coherence lengths, so that full quantum modeling will be required. In addition, novel new structures, such as molecules, may represent the active regions in such small devices. Here we outline a fully quantum mechanical approach to the modeling of coherent transport in ballistic structures. Examples of an SOI MOSFET and a molecule are presented.
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