Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3

Micro and Nano Structuring and Assembly Chapter 10

Single-Dot Spectroscopy of Low Density GaAs Quantum Dots Grown by Modified Droplet Epitaxy

Authors: M. Yamagiwa, F. Minami and N. Koguchi

Affilation: Tokyo Institute of Technology, Japan

Pages: 445 - 447

Keywords: modified droplet epitaxy, GaAs, quantum dot, micro-photoluminescence

Abstract:
Low density GaAs/AlGaAs quantum dots (QDs) have been fabricated using Modified Droplet Epitaxy (MDE) [1] for the spectroscopic study of single QDs using microphotoluminescence (µPL). In µPL measurements, the excitation/observation area is focused by a 50°— objective to a spot size of approximately 0.6 µm. Thus, a low density sample was necessary to limit the number of QDs in such a spot size to no more than one. This work made possible the first broad-spectrum single QD spectroscopy of GaAs/AlGaAs QDs fabricated by MDE. The excitation intensity dependence of the µPL spectrum of this sample shows multiple spectral lines which appear at higher excitation intensities. These lines appear from the recombination of electrons and holes from higher energy levels.

Single-Dot Spectroscopy of Low Density GaAs Quantum Dots Grown by Modified Droplet Epitaxy

ISBN: 0-9728422-9-2
Pages: 561
Hardcopy: $79.95