Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nano Photonics, Optoelectronics and Imaging Chapter 1

Nano-Scale Effects in GaN-based Light-Emitting Diodes

Authors: J. Piprek and S. Nakamura

Affilation: University of California, United States

Pages: 15 - 17

Keywords: wurtzite semiconductors, GaN, light-emitting diodes, built-in polarization, InGaN quantum well, nano-photonics

Abstract:
We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.

Nano-Scale Effects in GaN-based Light-Emitting Diodes

ISBN: 0-9728422-9-2
Pages: 561
Hardcopy: $79.95