Nano-Scale Effects in GaN-based Light-Emitting Diodes

	Nanotech 2004 Vol. 3 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 1: Nano Photonics, Optoelectronics and Imaging
	Nano-Scale Effects in GaN-based Light-Emitting Diodes
Authors:	J. Piprek and S. Nakamura
Affilation:	University of California, US
Pages:	15 - 17
Keywords:	wurtzite semiconductors, GaN, light-emitting diodes, built-in polarization, InGaN quantum well, nano-photonics
Abstract:	We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.
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ISBN:	0-9728422-9-2
Pages:	561
Hardcopy:	$79.95

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