Nano Science and Technology Institute
Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 1: Nano Photonics, Optoelectronics and Imaging
 

Nano-Scale Effects in GaN-based Light-Emitting Diodes

Authors:J. Piprek and S. Nakamura
Affilation:University of California, US
Pages:15 - 17
Keywords:wurtzite semiconductors, GaN, light-emitting diodes, built-in polarization, InGaN quantum well, nano-photonics
Abstract:We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.
Nano-Scale Effects in GaN-based Light-Emitting DiodesView PDF of paper
ISBN:0-9728422-9-2
Pages:561
Hardcopy:$79.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map