Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

Authors: S.B. Chiah, X. Zhou, K. Chandrasekaran, K-Y Lim, L. Chan and S. Chu

Affilation: Nanyang Technology University, Singapore

Pages: 175 - 178

Keywords: threshold voltage, symmetry

Abstract:
This paper presents a unified threshold-voltage-based (Vt-based) MOSFET model, which maintains source¡Vdrain symmetry and allows accurate prediction of transconductance (gm) and drain conductance (gds) and their derivatives (gm' and gds') with smooth transitions across regions of operation. This has been achieved based on our previous unified source-referenced Vt model [1] but re-derived with bulk reference for the drain current (Ids). A consistent and symmetric charge model is also derived for MOSFET intrinsic capacitances. It has been verified with the experimental data from a 0.18-ƒ_m CMOS shallow trench isolation (STI) technology wafer

Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95