Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs

Authors:J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre
Affilation:CNRS, FR
Pages:171 - 174
Keywords:double-gate transistor, ballistic transport, subthreshold current, analytical modeling
Abstract:An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main novelties usually neglected in compact modeling: the 2D short-channel effects and the tunneling of carriers through the source-to-drain barrier. Important device parameters, such as Ioff-current or subthreshold swing, can be easily evaluated though this full analytical approach which also provides a complete set of equations for developing equivalent-circuit model used in ICs simulation.
An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETsView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
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