Authors: J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre
Affilation: CNRS, France
Pages: 171 - 174
Keywords: double-gate transistor, ballistic transport, subthreshold current, analytical modeling
An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main novelties usually neglected in compact modeling: the 2D short-channel effects and the tunneling of carriers through the source-to-drain barrier. Important device parameters, such as Ioff-current or subthreshold swing, can be easily evaluated though this full analytical approach which also provides a complete set of equations for developing equivalent-circuit model used in ICs simulation.