 | Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 3: Compact Modeling |
Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates | |
| Authors: | J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki |
| Affilation: | CNRS, FR |
| Pages: | 163 - 166 |
| Keywords: | threshold voltage, double-gate MOSFET, quantum effects, analytical modeling |
| Abstract: | A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The model is completely validated using a full 2D quantum-mechanical numerical simulation code. Using this original model, a detailed comparison between symmetric and asymmetric Double-Gate architectures has been performed in terms of threshold voltage dependence with film thickness and doping level. |
 | View PDF of paper |
| ISBN: | 0-9728422-8-4 |
| Pages: | 519 |
| Hardcopy: | $79.95 |
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up |
© 2013 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map
Terms of Use | Privacy Policy | Contact Us | Site Map