Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Authors:J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki
Affilation:CNRS, FR
Pages:163 - 166
Keywords:threshold voltage, double-gate MOSFET, quantum effects, analytical modeling
Abstract:A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The model is completely validated using a full 2D quantum-mechanical numerical simulation code. Using this original model, a detailed comparison between symmetric and asymmetric Double-Gate architectures has been performed in terms of threshold voltage dependence with film thickness and doping level.
Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric GatesView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
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