Authors: J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki
Affilation: CNRS, France
Pages: 163 - 166
Keywords: threshold voltage, double-gate MOSFET, quantum effects, analytical modeling
A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The model is completely validated using a full 2D quantum-mechanical numerical simulation code. Using this original model, a detailed comparison between symmetric and asymmetric Double-Gate architectures has been performed in terms of threshold voltage dependence with film thickness and doping level.