Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

Authors: S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu

Affilation: National Nano Device Laboratories, Taiwan

Pages: 151 - 154

Keywords: MOSFET, substrate, small-signal modeling, parameter extraction

Abstract:
In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed to accurately determine the whole model parameters. The agreement between the measured and simulated S-parameters up to 40GHz proves the feasibility of this modified extraction method.

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95