Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

Authors:S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu
Affilation:National Nano Device Laboratories, TW
Pages:151 - 154
Keywords:MOSFET, substrate, small-signal modeling, parameter extraction
Abstract:In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed to accurately determine the whole model parameters. The agreement between the measured and simulated S-parameters up to 40GHz proves the feasibility of this modified extraction method.
A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal ModelView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
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