A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

	Nanotech 2004 Vol. 2 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2 Chapter 3: Compact Modeling
	A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model
Authors:	S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu
Affilation:	National Nano Device Laboratories, TW
Pages:	151 - 154
Keywords:	MOSFET, substrate, small-signal modeling, parameter extraction
Abstract:	In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed to accurately determine the whole model parameters. The agreement between the measured and simulated S-parameters up to 40GHz proves the feasibility of this modified extraction method.
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ISBN:	0-9728422-8-4
Pages:	519
Hardcopy:	$79.95

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