Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 3: Compact Modeling

On the Correlations Between Model Process Parameters in Statistical Modeling

Authors:J. Slezak, A. Litschmann, S. Banas, R. Mlcousek and M. Kejhar
Affilation:ON Semiconductor, CZ
Pages:144 - 146
Keywords:Statistical modeling, statistical correlations, corner analysis, process variations, Monte Carlo
Abstract:Statistical modeling in the design of todays high performance integrated circuits (ICs) is a necessity to produce competitive products with short development time. The use of backward propagation of variance (BPV) has proven its worth among other approaches proposed for the statistical modeling. This methodology introduces physically based process and geometry-dependent parameters (PGPs) for each device that is available to the design community in a model library. The goal of this contribution is to propose a simple method to establish mathematical relationships among correlated PGPs.
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