Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach

Authors: J. He, X.i Xi, M. Chan, A. Niknejad and C. Hu

Affilation: University of California, Berkeley, United States

Pages: 124 - 127

Keywords: double-gate SOI MOSFETs, Compact modeling, Non-charge-sheet model

Abstract:
A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poissons equation to solve for electron concentration directly rather than relying on the surface potential alone. Therefore, carrier distribution in the channel away from the surface is also taken care, giving a non-charge-sheet model compatible with the classical Pao-Sah model. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFETs data

A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95