Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Authors: H. Tran and M. Schroter

Affilation: University of Technology Dresden, Germany

Pages: 102 - 107

Keywords: bipolar transistor, analytical modeling, compact model

Abstract:
An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95