Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

	Nanotech 2004 Vol. 2 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2 Chapter 3: Compact Modeling
	Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors
Authors:	H. Tran and M. Schroter
Affilation:	University of Technology Dresden, DE
Pages:	102 - 107
Keywords:	bipolar transistor, analytical modeling, compact model
Abstract:	An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.
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ISBN:	0-9728422-8-4
Pages:	519
Hardcopy:	$79.95

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