Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

RF Noise Models of MOSFETs- A Review

Authors:S. Asgaran and M. Jamal Deen
Affilation:McMaster University, CA
Pages:96 - 101
Keywords:compact modeling, thermal noise
Abstract:A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated in short channel MOSFETs has made researchers revisit the problem to develop better models, especially in recent years. In this review, a detailed discussion of the most recent models published in the literature is provided. Each model is investigated in terms of physical and analytical aspects of the model, and some comments are made in each case. The induced gate noise, which is important in today’s high frequency applications, is also briefly reviewed at the end of this paper.
RF Noise Models of MOSFETs- A ReviewView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
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