R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

	Nanotech 2004 Vol. 2 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2 Chapter 3: Compact Modeling
	R3, an Accurate JFET and 3-Terminal Diffused Resistor Model
Authors:	C. McAndrew
Affilation:	Motorola, US
Pages:	86 - 89
Keywords:	JFET, diffused resistor, SPICE model, compact model, velocity saturation
Abstract:	This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.
	View PDF of paper
ISBN:	0-9728422-8-4
Pages:	519
Hardcopy:	$79.95

Order:	Mail/Fax Form
Special:	3 CD Set — 15% off with Free Shipping
Up