Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

Authors: C. McAndrew

Affilation: Motorola, United States

Pages: 86 - 89

Keywords: JFET, diffused resistor, SPICE model, compact model, velocity saturation

Abstract:
This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95