Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 3: Compact Modeling

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

Authors:C. McAndrew
Affilation:Motorola, US
Pages:86 - 89
Keywords:JFET, diffused resistor, SPICE model, compact model, velocity saturation
Abstract:This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.
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