Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

Authors:C. McAndrew
Affilation:Motorola, US
Pages:86 - 89
Keywords:JFET, diffused resistor, SPICE model, compact model, velocity saturation
Abstract:This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.
R3, an Accurate JFET and 3-Terminal Diffused Resistor ModelView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map