Authors: X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
Affilation: Nanyang Technological University, Singapore
Pages: 74 - 79
Keywords: compact model, symmetry, charge-based model, deep-submicron MOSFET, poly depletion, Xsim
This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C -V data, and inclusion of polydepletion effect for both DC and AC models.