Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Authors:X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
Affilation:Nanyang Technological University, SG
Pages:74 - 79
Keywords:compact model, symmetry, charge-based model, deep-submicron MOSFET, poly depletion, Xsim
Abstract:This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C -V data, and inclusion of polydepletion effect for both DC and AC models.
Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETsView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
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