Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Authors: X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu

Affilation: Nanyang Technological University, Singapore

Pages: 74 - 79

Keywords: compact model, symmetry, charge-based model, deep-submicron MOSFET, poly depletion, Xsim

Abstract:
This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C -V data, and inclusion of polydepletion effect for both DC and AC models.

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95