Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Authors: X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu

Affilation: University of California at Berkeley, United States

Pages: 70 - 73

Keywords: MOSFETs, compact modeling, surfacepotential-plus model, small dimensional effects

Abstract:
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.


ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95

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