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 | Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 3: Compact Modeling |
| | The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation | | Authors: | X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu | | Affilation: | University of California at Berkeley, US | | Pages: | 70 - 73 | | Keywords: | MOSFETs, compact modeling, surfacepotential-plus model, small dimensional effects | | Abstract: | This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. | | ISBN: | 0-9728422-8-4 |
| Pages: | 519 |
| Hardcopy: | $150.00 |
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