Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Authors:M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto
Affilation:Hiroshima University, JP
Pages:66 - 69
Keywords:MOSFET model, noise measurement, surface potential, HiSIM
Abstract:Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is determined only by the I-V characteristics even for short-channelMOSFETs. Good agreement with measurements is the justification of the model implemented in HiSIM, the circuit simulation model based on a full surface-potential description. The thermal drain-noise coefficient of short-channel MOSFETs increases from 2/3 under the saturation condition. The origin is explained by the potential increase along the channel.
Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential DescriptionView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map