Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

Recent Enhancements of MOS Model 11

Authors:R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
Affilation:Philips Research Laboratories, NL
Pages:60 - 65
Keywords:MOS Model 11, compact MOSFET modelling, surface potential, thermal noise, induced gate noise
Abstract:MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, level 1102, has been completed and is under test. It includes: i) an iterative solution of the surface potential; ii) an improved description of the velocity saturation yielding a better modelling of the transconductance in saturation; and iii) a better description of noise, especially the induced gate current noise. In this paper we describe these improvements and show the resulting improved modelling of transistor performance.
Recent Enhancements of MOS Model 11View PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
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