Recent Enhancements of MOS Model 11

	Nanotech 2004 Vol. 2 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2 Chapter 3: Compact Modeling
	Recent Enhancements of MOS Model 11
Authors:	R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
Affilation:	Philips Research Laboratories, NL
Pages:	60 - 65
Keywords:	MOS Model 11, compact MOSFET modelling, surface potential, thermal noise, induced gate noise
Abstract:	MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, level 1102, has been completed and is under test. It includes: i) an iterative solution of the surface potential; ii) an improved description of the velocity saturation yielding a better modelling of the transconductance in saturation; and iii) a better description of noise, especially the induced gate current noise. In this paper we describe these improvements and show the resulting improved modelling of transistor performance.
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ISBN:	0-9728422-8-4
Pages:	519
Hardcopy:	$79.95

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