Authors: C. Galup-Montoro, M.C. Schneider, A. Arnaud and H. Klimach
Affilation: Universidade Federal de Santa Catarina, Brazil
Pages: 494 - 499
Keywords: MOSFET, analog design, matching, noise, compact models
This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, consistent dc, ac, noise, and mismatch models for all operating modes of the MOSFET are described. Experimental results confirm the accuracy of both mismatch and noise models under various bias conditions.