Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 3: Compact Modeling
 

Technology Limits and Compact Model for SiGe Scaled FETs

Authors:R.W. Dutton and C-H Choi
Affilation:Stanford, US
Pages:52 - 55
Keywords:strained-Si, STI, stress, ESD, capacitance
Abstract:Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the active region is scaled from Lactive=0.4 µm to 0.1 µm. Mobility can be lower by 50 % for narrow active widths resulting from the strain relaxation. The strain relaxation may restrict the use of strained-Si MOSFETs for technology nodes beyond 25 nm. Electrical and thermal characteristics of strained-Si devices are investigated and a compact junction capacitance model for strained-Si MOSFET suitable for circuit simulation is proposed.
Technology Limits and Compact Model for SiGe Scaled FETsView PDF of paper
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map