Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

Technology Limits and Compact Model for SiGe Scaled FETs
R.W. Dutton and C-H Choi
Stanford, US

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects
Z. Yu, D. Zhang and L. Tian
Tsinghua University, CN

Recent Enhancements of MOS Model 11
R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
Philips Research Laboratories, NL

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description
M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto
Hiroshima University, JP

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation
X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
University of California at Berkeley, US

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
Nanyang Technological University, SG

Modeling and Characterization of Wire Inductance for High Speed VLSI Design
N.D. Arora and L. Song
Cadence Design Systems, US

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model
C. McAndrew
Motorola, US

Advanced MOSFET Modeling for RF IC Design
Y. Cheng
Skyworks Solutions, US

RF Noise Models of MOSFETs- A Review
S. Asgaran and M. Jamal Deen
McMaster University, CA

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors
H. Tran and M. Schroter
University of Technology Dresden, DE

Quasi-2D Compact Modeling for Double-Gate MOSFET
M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu
Hong Kong University of Science and Technology, HK

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs
Q. Chen, L. Wang, R. Murali and J.D. Meindl
Georgia Institute of Technology, US

Floating Gate Devices: Operation and Compact Modeling
P. Pavan, L. Larcher and A. Marmiroli
Università di Modena e Reggio Emilia, IT

A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach
J. He, X.i Xi, M. Chan, A. Niknejad and C. Hu
University of California, Berkeley, US

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach
J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
University of California, Berkeley, US

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction
J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
University of California, Berkeley, US

Extraction of Extrinsic Series Resistance in RF CMOS
M.S. Alam and G.A. Armstrong
The Queen’s University of Belfast, UK

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices
H.C. Morris, M.M. DePass and H. Abebe
San Jose State University, US

On the Correlations Between Model Process Parameters in Statistical Modeling
J. Slezak, A. Litschmann, S. Banas, R. Mlcousek and M. Kejhar
ON Semiconductor, CZ

A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology
Y. Iino
Silvaco Japan, JP

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model
S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu
National Nano Device Laboratories, TW

Characterization and Modeling of Silicon Tapered Inductors
A.S. Peng, K.M. Chen, G.W. Huang, S.C. Wang, H.Y. Chen and C.Y. Chang
National Nano Device Laboratories, TW

Improved Compact Model for Four-Terminal DG MOSFETs
T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki and H. Koike
National Institute of Advanced Industrial Science and Technology, JP

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates
J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki
CNRS, FR

Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions
Y. Mahotin and E. Lyumkis
Integrated Systems Engineering, Inc., US

An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs
J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre
CNRS, FR

Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity
S.B. Chiah, X. Zhou, K. Chandrasekaran, K-Y Lim, L. Chan and S. Chu
Nanyang Technology University, SG

Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs
K. Chandrasekaran, X. Zhou and S.B. Chiah
Nanyang Technology University, SG

Predicting the SOI History Effect Using Compact Models
M.H. Na, J.S. Watts, E.J. Nowak, R.Q. Williams and W.F. Clark
IBM Corporation, US

New Capabilities for Verilog-A Implementations of Compact Device Models
M. Mierzwinski, P. OHalloran, B. Troyanovsky, K. Mayaram and R.W. Dutton
Tiburon Design Automation, US

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET
C. Galup-Montoro, M.C. Schneider, A. Arnaud and H. Klimach
Universidade Federal de Santa Catarina, BR


ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95