Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 3: ## Compact Modeling | |

- | Technology Limits and Compact Model for SiGe Scaled FETs |

R.W. Dutton and C-H Choi | |

Stanford, US | |

- | Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects |

Z. Yu, D. Zhang and L. Tian | |

Tsinghua University, CN | |

- | Recent Enhancements of MOS Model 11 |

R. van Langevelde, A.J. Scholten and D.B.M. Klaassen | |

Philips Research Laboratories, NL | |

- | Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description |

M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto | |

Hiroshima University, JP | |

- | The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation |

X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu | |

University of California at Berkeley, US | |

- | Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs |

X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu | |

Nanyang Technological University, SG | |

- | Modeling and Characterization of Wire Inductance for High Speed VLSI Design |

N.D. Arora and L. Song | |

Cadence Design Systems, US | |

- | R3, an Accurate JFET and 3-Terminal Diffused Resistor Model |

C. McAndrew | |

Motorola, US | |

- | Advanced MOSFET Modeling for RF IC Design |

Y. Cheng | |

Skyworks Solutions, US | |

- | RF Noise Models of MOSFETs- A Review |

S. Asgaran and M. Jamal Deen | |

McMaster University, CA | |

- | Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors |

H. Tran and M. Schroter | |

University of Technology Dresden, DE | |

- | Quasi-2D Compact Modeling for Double-Gate MOSFET |

M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu | |

Hong Kong University of Science and Technology, HK | |

- | Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs |

Q. Chen, L. Wang, R. Murali and J.D. Meindl | |

Georgia Institute of Technology, US | |

- | Floating Gate Devices: Operation and Compact Modeling |

P. Pavan, L. Larcher and A. Marmiroli | |

UniversitĂ di Modena e Reggio Emilia, IT | |

- | A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach |

J. He, X.i Xi, M. Chan, A. Niknejad and C. Hu | |

University of California, Berkeley, US | |

- | An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach |

J. He, X. Xi, M. Chan, A. Niknejad and C. Hu | |

University of California, Berkeley, US | |

- | Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction |

J. He, X. Xi, M. Chan, A. Niknejad and C. Hu | |

University of California, Berkeley, US | |

- | Extraction of Extrinsic Series Resistance in RF CMOS |

M.S. Alam and G.A. Armstrong | |

The Queenâ€™s University of Belfast, UK | |

- | Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices |

H.C. Morris, M.M. DePass and H. Abebe | |

San Jose State University, US | |

- | On the Correlations Between Model Process Parameters in Statistical Modeling |

J. Slezak, A. Litschmann, S. Banas, R. Mlcousek and M. Kejhar | |

ON Semiconductor, CZ | |

- | A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology |

Y. Iino | |

Silvaco Japan, JP | |

- | A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model |

S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu | |

National Nano Device Laboratories, TW | |

- | Characterization and Modeling of Silicon Tapered Inductors |

A.S. Peng, K.M. Chen, G.W. Huang, S.C. Wang, H.Y. Chen and C.Y. Chang | |

National Nano Device Laboratories, TW | |

- | Improved Compact Model for Four-Terminal DG MOSFETs |

T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki and H. Koike | |

National Institute of Advanced Industrial Science and Technology, JP | |

- | Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates |

J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki | |

CNRS, FR | |

- | Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions |

Y. Mahotin and E. Lyumkis | |

Integrated Systems Engineering, Inc., US | |

- | An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs |

J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre | |

CNRS, FR | |

- | Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity |

S.B. Chiah, X. Zhou, K. Chandrasekaran, K-Y Lim, L. Chan and S. Chu | |

Nanyang Technology University, SG | |

- | Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs |

K. Chandrasekaran, X. Zhou and S.B. Chiah | |

Nanyang Technology University, SG | |

- | Predicting the SOI History Effect Using Compact Models |

M.H. Na, J.S. Watts, E.J. Nowak, R.Q. Williams and W.F. Clark | |

IBM Corporation, US | |

- | New Capabilities for Verilog-A Implementations of Compact Device Models |

M. Mierzwinski, P. OHalloran, B. Troyanovsky, K. Mayaram and R.W. Dutton | |

Tiburon Design Automation, US | |

- | Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET |

C. Galup-Montoro, M.C. Schneider, A. Arnaud and H. Klimach | |

Universidade Federal de Santa Catarina, BR | |

ISBN: | 0-9728422-8-4 |

Pages: | 519 |

Hardcopy: | $79.95 |

Order: | Mail/Fax Form |

Up |