Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Chapter 3:

Compact Modeling

-Technology Limits and Compact Model for SiGe Scaled FETs
 R.W. Dutton and C-H Choi
 Stanford, US
-Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects
 Z. Yu, D. Zhang and L. Tian
 Tsinghua University, CN
-Recent Enhancements of MOS Model 11
 R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
 Philips Research Laboratories, NL
-Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description
 M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto
 Hiroshima University, JP
-The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation
 X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
 University of California at Berkeley, US
-Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
 X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
 Nanyang Technological University, SG
-Modeling and Characterization of Wire Inductance for High Speed VLSI Design
 N.D. Arora and L. Song
 Cadence Design Systems, US
-R3, an Accurate JFET and 3-Terminal Diffused Resistor Model
 C. McAndrew
 Motorola, US
-Advanced MOSFET Modeling for RF IC Design
 Y. Cheng
 Skyworks Solutions, US
-RF Noise Models of MOSFETs- A Review
 S. Asgaran and M. Jamal Deen
 McMaster University, CA
-Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors
 H. Tran and M. Schroter
 University of Technology Dresden, DE
-Quasi-2D Compact Modeling for Double-Gate MOSFET
 M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu
 Hong Kong University of Science and Technology, HK
-Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs
 Q. Chen, L. Wang, R. Murali and J.D. Meindl
 Georgia Institute of Technology, US
-Floating Gate Devices: Operation and Compact Modeling
 P. Pavan, L. Larcher and A. Marmiroli
 UniversitĂ  di Modena e Reggio Emilia, IT
-A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach
 J. He, X.i Xi, M. Chan, A. Niknejad and C. Hu
 University of California, Berkeley, US
-An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach
 J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
 University of California, Berkeley, US
-Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction
 J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
 University of California, Berkeley, US
-Extraction of Extrinsic Series Resistance in RF CMOS
 M.S. Alam and G.A. Armstrong
 The Queen’s University of Belfast, UK
-Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices
 H.C. Morris, M.M. DePass and H. Abebe
 San Jose State University, US
-On the Correlations Between Model Process Parameters in Statistical Modeling
 J. Slezak, A. Litschmann, S. Banas, R. Mlcousek and M. Kejhar
 ON Semiconductor, CZ
-A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology
 Y. Iino
 Silvaco Japan, JP
-A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model
 S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu
 National Nano Device Laboratories, TW
-Characterization and Modeling of Silicon Tapered Inductors
 A.S. Peng, K.M. Chen, G.W. Huang, S.C. Wang, H.Y. Chen and C.Y. Chang
 National Nano Device Laboratories, TW
-Improved Compact Model for Four-Terminal DG MOSFETs
 T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, E. Suzuki and H. Koike
 National Institute of Advanced Industrial Science and Technology, JP
-Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates
 J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki
 CNRS, FR
-Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions
 Y. Mahotin and E. Lyumkis
 Integrated Systems Engineering, Inc., US
-An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs
 J.L. Autran, D. Munteanu, O. Tintori, M. Aubert and E. Decarre
 CNRS, FR
-Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity
 S.B. Chiah, X. Zhou, K. Chandrasekaran, K-Y Lim, L. Chan and S. Chu
 Nanyang Technology University, SG
-Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs
 K. Chandrasekaran, X. Zhou and S.B. Chiah
 Nanyang Technology University, SG
-Predicting the SOI History Effect Using Compact Models
 M.H. Na, J.S. Watts, E.J. Nowak, R.Q. Williams and W.F. Clark
 IBM Corporation, US
-New Capabilities for Verilog-A Implementations of Compact Device Models
 M. Mierzwinski, P. OHalloran, B. Troyanovsky, K. Mayaram and R.W. Dutton
 Tiburon Design Automation, US
-Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET
 C. Galup-Montoro, M.C. Schneider, A. Arnaud and H. Klimach
 Universidade Federal de Santa Catarina, BR
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map