Sub-Threshold Electron Mobility in SOI-MESFETs

	Nanotech 2004 Vol. 2 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2 Chapter 2: Nano Scale Device Modeling
	Sub-Threshold Electron Mobility in SOI-MESFETs
Authors:	T. Khan, D. Vasileska and T.J. Thornton
Affilation:	Arizona State University, US
Pages:	49 - 51
Keywords:	Schottky junction transistor, SJT, subthreshold conduction, micropower
Abstract:	Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/µm) and small drain voltages required for saturation (Vd sat ~150-200mV). Unfortunately, sub-threshold CMOS is a slow technology, with micropower circuits limited to operating frequencies below ~ 1MHz. To achieve higher sub-threshold operating frequencies, we have proposed a Schottky Junction Transistor (SJT) [1] as an alternative to sub-threshold MOSFET devices. It adopts a MESFET architecture and exhibits higher electron mobility. The enhanced MESFET mobility leads to a corresponding increase in the cut-off frequency fT compared to a similar gate length MOSFET carrying the same amount of current
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ISBN:	0-9728422-8-4
Pages:	519
Hardcopy:	$79.95

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