Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Nano Scale Device Modeling Chapter 2

Sub-Threshold Electron Mobility in SOI-MESFETs

Authors: T. Khan, D. Vasileska and T.J. Thornton

Affilation: Arizona State University, United States

Pages: 49 - 51

Keywords: Schottky junction transistor, SJT, subthreshold conduction, micropower

Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/µm) and small drain voltages required for saturation (Vd sat ~150-200mV). Unfortunately, sub-threshold CMOS is a slow technology, with micropower circuits limited to operating frequencies below ~ 1MHz. To achieve higher sub-threshold operating frequencies, we have proposed a Schottky Junction Transistor (SJT) [1] as an alternative to sub-threshold MOSFET devices. It adopts a MESFET architecture and exhibits higher electron mobility. The enhanced MESFET mobility leads to a corresponding increase in the cut-off frequency fT compared to a similar gate length MOSFET carrying the same amount of current

Sub-Threshold Electron Mobility in SOI-MESFETs

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95