Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Nano Scale Device Modeling Chapter 2

Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model

Authors: M-A Jaud, S. Barraud and G. Le Carval

Affilation: CEA-LETI, France

Pages: 17 - 20

Keywords: quantum tunnelling, double-gate, quantum-drift-diffusion-model

Abstract:
With the growing use of wireless electronics systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S?D) have recently shown that it will become detrimental in bulk MOSFET architecture for channel length around 5nm and at low temperature (£100K). After a careful validation of quantum drift-diffusion model (QDDM), we present a systematic study of the impact of source-drain direct tunnelling on off-state leakage current in double-gate MOSFET architectures. A large range of temperature (100K<T<Lc<tsi

Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95