Nano Science and Technology Institute
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Chapter 2:

Nano Scale Device Modeling

-Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model
 M-A Jaud, S. Barraud and G. Le Carval
 CEA-LETI, FR
-Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization
 C. Renard, P. Scheiblin, F. de Crécy, A. Ferron, E. Guichard, P. Holliger and C. Laviron
 CEA-LETI, FR
-Full-band Particle-based Simulation of Germanium-On-Insulator FETs
 S. Beysserie, J. Branlard, S. Aboud, S.M. Goodnick, T. Thornton and M. Saraniti
 Illinois Institute of Technology, US
-A Technology-Independent Model for Nanoscale Logic Devices
 M.P. Frank
 University of Florida, US
-Hierarchical Simulation Approaches for the Design of Ultra-Fast Amplifier Circuits
 J. Desai, S. Aboud, P. Chiney, P. Osuch, J. Branlard, S. Goodnick and M. Saraniti
 IIT/Rush University, US
-Principles of Metallic Field Effect Transistor (METFET)
 S.V. Rotkin and K. Hess
 University of Illinois at Urbana-Champaign, Beckman Institute for Advanced Science and Technology, US
-Ab Initio Simulation on Mechanical and Electronic Properties of Nanostructures under Deformation
 Y. Umeno and T. Kitamura
 Kyoto University, JP
-Atomistic Process and Simulation in the Regime of sub-50nm Gate Length
 O. Kwon, K. Kim, J. Seo and T. Won
 Inha University, KR
-Sub-Threshold Electron Mobility in SOI-MESFETs
 T. Khan, D. Vasileska and T.J. Thornton
 Arizona State University, US
ISBN:0-9728422-8-4
Pages:519
Hardcopy:$79.95
 
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