Modeling and Practial Verification of the Ionophore Based Chemically Modified Field Effect Transistor

	Nanotech 2004 Vol. 1 Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 1 Chapter 9: Smart MEMS and Sensor Systems
	Modeling and Practial Verification of the Ionophore Based Chemically Modified Field Effect Transistor
Authors:	M. Daniel, M. Szermer, M. Janicki and A. Napieralski
Affilation:	DMCS, Technical University of Lodz, PL
Pages:	438 - 442
Keywords:	CHEMFET, SEWING, BSC, VHDL-AMS
Abstract:	Proper CAD design of electronic microsystems oriented for environment monitoring requires accurate models of various sensors, which would be compatible with the existing behavioral simulators. In this paper the analysis of the ion sensitive transistor was performed and two models of the CHEmically Modified Field Effect Transistors (CHEMFETs) were applied to the sensor model. Two models of the membrane potential were also compared. The models were implemented in Hardware Description Language (VHDL-AMS) in order to provide the future possibility for the mixed domain, mixed signal simulation of the microsystem incorporating the sensors, operating circuit and analog to digital conversion circuits. Both models were validated by the measurements of the real structures. The most important parameters were identified as a result of parameter extraction procedure.
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ISBN:	0-9728422-7-6
Pages:	521
Hardcopy:	$79.95

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