Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
Nanotech 2004 Vol. 1
p
 
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 1
Nanotech 2004 Vol. 1
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 9: Smart MEMS and Sensor Systems
 

Modeling and Practial Verification of the Ionophore Based Chemically Modified Field Effect Transistor

Authors:M. Daniel, M. Szermer, M. Janicki and A. Napieralski
Affilation:DMCS, Technical University of Lodz, PL
Pages:438 - 442
Keywords:CHEMFET, SEWING, BSC, VHDL-AMS
Abstract:Proper CAD design of electronic microsystems oriented for environment monitoring requires accurate models of various sensors, which would be compatible with the existing behavioral simulators. In this paper the analysis of the ion sensitive transistor was performed and two models of the CHEmically Modified Field Effect Transistors (CHEMFETs) were applied to the sensor model. Two models of the membrane potential were also compared. The models were implemented in Hardware Description Language (VHDL-AMS) in order to provide the future possibility for the mixed domain, mixed signal simulation of the microsystem incorporating the sensors, operating circuit and analog to digital conversion circuits. Both models were validated by the measurements of the real structures. The most important parameters were identified as a result of parameter extraction procedure.
ISBN:0-9728422-7-6
Pages:521
Hardcopy:$150.00
 
Order:Mail/Fax Form
Special:3 CD Set — 15% off with Free Shipping
Up
Upcoming Events
Nanotech 2009
Cleantech 2009
BioNano 2009
TechConnect Summit
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact