Nano Science and Technology Institute
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 1
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 11: Wafer and MEMS Processing
 

Process Factors in the Reduction of Output Conductance in Sub-micron CMOS

Authors:N.C. May, H.S. Tan and A.V. Kordesch
Affilation:SILTERRA (M) SDN BHD, MY
Pages:477 - 480
Keywords:output conductance, early voltage, DIBL, Rout, channel engineering
Abstract:CMOS Analog circuits require transistors with low output conductance (gds) in order to achieve high gain. Submicron MOSFETs with halo implants and retrograde wells are designed to have high transconductance (gm) but often suffer from poor output conductance. In this paper we investigated the process factors affecting gds and we show how to optimize gds. Our experimental results from 180nm CMOS are compared with 2D simulations in order to understand the mechanisms involved. Output conductance is the derivative of the ID-VD curve, gds = dID/dVD. In saturation, several effects contribute to the increase of ID with VD, namely channel length modulation (CLM), drain-induced barrier lowering (DIBL), and substrate current body effect (SCBE). We have mainly focused on PMOS transistors at voltages where the substrate current is not significant.
Process Factors in the Reduction of Output Conductance in Sub-micron CMOSView PDF of paper
ISBN:0-9728422-7-6
Pages:521
Hardcopy:$79.95
 
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