Multi-Tunnel-Junction Memory : Analyses of Feasibility for Non-Volatile Memory Applications

	Nanotech 2003 Vol. 3 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Nano Devices and Systems
	Multi-Tunnel-Junction Memory : Analyses of Feasibility for Non-Volatile Memory Applications
Authors:	C. Le Royer, G. Le Carval and M. Sanquer
Affilation:	CEA - LETI, FR
Pages:	329 - 332
Keywords:	nanodots, Coulomb blockade, memory, modeling
Abstract:	MOSFET Memories based on quantum dots have been investigated extensively because of their promising applications to non-volatile and low voltage memories. Among these memories, the Multi-Tunnel-Junction Memory (MTJM) appears to be a promising concept for both DRAM and Non-Volatile Memories (NVM). For this last application, we analyze by simulation the effects of the technological parameters (dots density and size, geometries) on the writing and retention characteristics of the MTJM cell.
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ISBN:	0-9728422-2-5
Pages:	560
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