Nanotech 2003 Vol. 3
Nanotech 2003 Vol. 3
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 3

Nano Devices and Systems Chapter 7

Multi-Tunnel-Junction Memory : Analyses of Feasibility for Non-Volatile Memory Applications

Authors: C. Le Royer, G. Le Carval and M. Sanquer

Affilation: CEA - LETI, France

Pages: 329 - 332

Keywords: nanodots, Coulomb blockade, memory, modeling

Abstract:
MOSFET Memories based on quantum dots have been investigated extensively because of their promising applications to non-volatile and low voltage memories. Among these memories, the Multi-Tunnel-Junction Memory (MTJM) appears to be a promising concept for both DRAM and Non-Volatile Memories (NVM). For this last application, we analyze by simulation the effects of the technological parameters (dots density and size, geometries) on the writing and retention characteristics of the MTJM cell.

Multi-Tunnel-Junction Memory : Analyses of Feasibility for Non-Volatile Memory Applications

ISBN: 0-9728422-2-5
Pages: 560