Authors: S. Fujita, K. Uchida, S. Yasuda, R. Ohba and T. Tanamoto
Affilation: Toshiba Corp, Japan
Pages: 309 - 312
Keywords: nanodevice, single electron transistor, random number
We propose a new application of silicon (Si) nanodevices that can generate high-quality random numbers (HQ-RNs) for mobile communication security systems, one of most important elements of information technology (IT). We have successfully demonstrated the generation of HQ-RNs using Si nanodevices having nanoscaled electron channels and electron traps. -----The Si nanodevice is based on a single-electron transistor (SET) and a single electron trap. The SET is fabricated in an undulated ultra-thin-Si-on-insulator film. The nanoscaled undulation in the ultra-thin film results in the formation of nanoscale potential fluctuations. Thus, both a narrow percolation electron-channel and a small potential pocket acting as an electron trap are formed in the film. Since the trap is single, the trap makes SET characteristics digital (telegraphic). We have also found that these digital signals are sufficiently large to be directly treated as random digital sequences (~0.3V), since SET has high charge sensitivity. The ratio of time for high voltage and low voltage can be made uniform precisely by gate voltage. Thus, this device can generate HQ-RNs without analog to digital conversion.