Authors: H. Xie, G.K. Fedder, Z. Pan and W. Frey
Affilation: University of Florida, United States
Pages: 420 - 423
Keywords: CMOS-MEMS, accelerometer, 3-axis
This paper reports a novel single structure, three-axis sensing accelerometer based on post-CMOS process. The resultant device incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without extra front-side lithography, or wafer bonding, which are required by other CMOS three-axis accelerometers. Behavioral simulation using NODAS and FEM simulation were used to validate the design. The overall structure size is about 1mm by 1mm. Noise floor of 0.1 mG/rtHz is expected in all three axes. Characterization is ongoing.