RF Device Design

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 8: RF Device Design
-	Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology
	J. Lin, Y. Kiat Seng, M. Jian Guo and D. Manh Anh
	Nanyang Technological University, SG
-	Ultra Thin Packaging of the RF-MEMS Devices with Low loss
	Y.K. Park, Y.K. Kim, H. Kim, D.J. Lee, H-W. Park, C.J. Kim and B.K. Ju
	Korea Institute of Science and Technology, KR
-	RF-MEMS Voltage Tunable Capacitor using Electrostatic Forces
	J. Lee, Y. Kim, D. Na and S. Park
	Kyungpook National University, KR
-	Design Optimization of Micromachined High Aspect Ratio 3D On-Chip Solenoid Inductor
	N. Chomnawang, H. Lu, K. Colinjivadi and J. Lee
	University of Texas at Dallas, US
-	Numerical Simulations of Novel Constant-Charge Biasing Method for Capacitive RF MEMS Switch
	J. Lee and C. Goldsmith
	University of Texas at Dallas, US
-	Fabrication of 3-Dimesional Cu Coaxial Cylinder using Porous Silicon MEMS Technology
	D.S Eun, Y.M. Kim, CH.H. Bae, J.H. Lee
	Kyungpook National University, KR
-	MEMS Technologies for Communications
	C.T.-C. Nguyen
	DARPA/MTO, US
ISBN:	0-9728422-1-7
Pages:	600
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