Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 7

A Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors

Authors: T. Gneiting

Affilation: Advanced Modeling Solutions, Germany

Pages: 368 - 371

Keywords: MOSFET, compact models, model parameter, extraction

Abstract:
This paper discusses the aspects of modern MOS modeling requirements. Starting fro the fact, that even the Compact Model Council (CMC) outlined BSIM3v3 as a standard MOS simulation mode, many other models are used throughout the semiconductor community. Their common approach is they are all highly scalable to cover a wide range of transistor dimensions. To cover this effect, a strategy for efficient model parameter extraction with a special emphasis on scalability is illustrated. This leads to a software architecture and a data base concept, which enables modeling engineers to handle the parameter extraction for different simulation models from one common measurement base in a very efficient and flexible way.

A Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors

ISBN: 0-9728422-1-7
Pages: 600