Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling

A Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors

Authors:T. Gneiting
Affilation:Advanced Modeling Solutions, DE
Pages:368 - 371
Keywords:MOSFET, compact models, model parameter, extraction
Abstract:This paper discusses the aspects of modern MOS modeling requirements. Starting fro the fact, that even the Compact Model Council (CMC) outlined BSIM3v3 as a standard MOS simulation mode, many other models are used throughout the semiconductor community. Their common approach is they are all highly scalable to cover a wide range of transistor dimensions. To cover this effect, a strategy for efficient model parameter extraction with a special emphasis on scalability is illustrated. This leads to a software architecture and a data base concept, which enables modeling engineers to handle the parameter extraction for different simulation models from one common measurement base in a very efficient and flexible way.
A Unified Environment for the Modeling of Ultra Deep Submicron MOS TransistorsView PDF of paper
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