Authors: T. Gneiting
Affilation: Advanced Modeling Solutions, Germany
Pages: 368 - 371
Keywords: MOSFET, compact models, model parameter, extraction
This paper discusses the aspects of modern MOS modeling requirements. Starting fro the fact, that even the Compact Model Council (CMC) outlined BSIM3v3 as a standard MOS simulation mode, many other models are used throughout the semiconductor community. Their common approach is they are all highly scalable to cover a wide range of transistor dimensions. To cover this effect, a strategy for efficient model parameter extraction with a special emphasis on scalability is illustrated. This leads to a software architecture and a data base concept, which enables modeling engineers to handle the parameter extraction for different simulation models from one common measurement base in a very efficient and flexible way.