Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling

Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

Authors:S.B Chiah , X. Zhou and K.Y. Lim
Affilation:Nanyang Technological University, SG
Pages:342 - 345
Keywords:short-/narrow-channel effects
Abstract:The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including perpendicular-field mobility degradation, velocity saturation, source/drain series resistance, as well as channel-length modulation for all regions of operation. This has been achieved based on the ideas of the previous length-dependent Ids(L) model [1], which allows the unified Ids model to be extended to both length and width dimensions at various bias conditions
Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETsView PDF of paper
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