Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 7: Compact Modeling
	Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs
Authors:	S.B Chiah, X. Zhou and K.Y. Lim
Affilation:	Nanyang Technological University, SG
Pages:	342 - 345
Keywords:	short-/narrow-channel effects
Abstract:	The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including perpendicular-field mobility degradation, velocity saturation, source/drain series resistance, as well as channel-length modulation for all regions of operation. This has been achieved based on the ideas of the previous length-dependent Ids(L) model [1], which allows the unified Ids model to be extended to both length and width dimensions at various bias conditions
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ISBN:	0-9728422-1-7
Pages:	600
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