Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 7

Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

Authors: S.B Chiah , X. Zhou and K.Y. Lim

Affilation: Nanyang Technological University, Singapore

Pages: 342 - 345

Keywords: short-/narrow-channel effects

Abstract:
The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including perpendicular-field mobility degradation, velocity saturation, source/drain series resistance, as well as channel-length modulation for all regions of operation. This has been achieved based on the ideas of the previous length-dependent Ids(L) model [1], which allows the unified Ids model to be extended to both length and width dimensions at various bias conditions

Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

ISBN: 0-9728422-1-7
Pages: 600