Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 7: Compact Modeling
 

Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

Authors:S.B Chiah , X. Zhou and K.Y. Lim
Affilation:Nanyang Technological University, SG
Pages:338 - 341
Keywords:short-/narrow-channel effects, threshold voltage
Abstract:The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) and inverse narrow-width effect (INWE). This has been achieved based on the ideas of the previous length-dependent Vt(L) model, which allows the unified Vt model to be extended to both length and width dimensions at various bias conditions.
Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width EffectsView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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