Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 7: Compact Modeling
 

A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET's Operation from the Accumulation to Depletion Region

Authors:J. He, X. Xi, M. Chan, K. Cao, A. Niknejad and C. Hu
Affilation:University of California, Berkeley, US
Pages:302 - 305
Keywords:Compact modeling, MOSFETs, accumulation layer, surface potential, capacitance
Abstract:A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFETs Operation from Strong Accumulation to Depletion region Jin He*+, Xuemei Xi*, Mansun Chan*, and Chenming Hu* (*Electronics Research Laboratory, Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA, 94720, USA) (+Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China) e-mail jinhe@eecs.berkeley.edu fax:01-510-643-2636 Abstract A physics-based analytical continuous model of MOSFET surface p potential and capacitance from strong accumulation to depletion is presented and the result is compared with 2-D numerical device simulation. Starting from the Poisson equation, an exact solution of the surface potential from accumulation to depletion is derived. Then, a continuous capacitance expression has been obtained and which gives a good agreement with 2-D device simulation. In addition, the importance of this model is demonstrated in the analysis of harmonic distortion.
A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET's Operation from the Accumulation to Depletion RegionView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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