Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 7

Physical Modeling of Substrate Resistance in RF MOSFETs

Authors: J. Han, M. Je and H. Shin

Affilation: Korea Advanced Institute of Science & Technology, Korea

Pages: 290 - 293

Keywords: RF MOSFET, MOSFET modeling, substrate resistance, substrate coupling, parameter extraction

Abstract:
A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances on the device geometry is also presented. The substrate signal coupling effect on the small-signal output admittance and its gate-bias dependence are analyzed.

Physical Modeling of Substrate Resistance in RF MOSFETs

ISBN: 0-9728422-1-7
Pages: 600