Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 7: Compact Modeling
 

Physical Modeling of Substrate Resistance in RF MOSFETs

Authors:J. Han, M. Je and H. Shin
Affilation:Korea Advanced Institute of Science & Technology, KR
Pages:290 - 293
Keywords:RF MOSFET, MOSFET modeling, substrate resistance, substrate coupling, parameter extraction
Abstract:A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances on the device geometry is also presented. The substrate signal coupling effect on the small-signal output admittance and its gate-bias dependence are analyzed.
Physical Modeling of Substrate Resistance in RF MOSFETsView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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